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| Final data SPW47N60C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances Product Summary VDS @ Tjmax RDS(on) ID 650 0.07 47 P-TO247 V A Type SPW47N60C3 Package P-TO247 Ordering Code Q67040-S4491 Marking 47N60C3 Maximum Ratings, at TC = 25C, unless otherwise specified Parameter Continuous drain current TC = 25 C TC = 100 C Symbol ID Value 47 30 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =10A, VDD =50V ID puls EAS EAR IAR dv/dt VGS VGS Ptot Tj , Tstg Page 1 141 1800 1 20 6 20 30 415 -55... +150 W C A V/ns V mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =20A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS =47A, VDS < VDD, di/dt=100A/s, Tjmax =150C Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature 2002-08-08 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj = 25 C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPW47N60C3 Symbol min. RthJC RthJA Tsold - Values typ. max. 0.3 62 3.33 260 Unit K/W W/K C V(BR)DSS V(BR)DS VGS(th) IDSS 600 2.1 700 3 3.9 V Drain-source avalanche breakdown voltage VGS =0V, ID =20A Gate threshold voltage, VGS = VDS ID =2.7mA Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 C VDS = 600 V, VGS = 0 V, Tj = 150 C A 0.5 0.06 0.62 25 250 100 0.07 nA Gate-source leakage current VGS =30V, VDS=0V IGSS RDS(on) RG - Drain-source on-state resistance VGS =10V, ID=47A, Tj =25C Gate input resistance f = 1 MHz, open drain 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR Page 2 2002-08-08 Final data Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 2) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =350V, ID =47A, VGS =0 to 10V VDD =350V, ID =47A SPW47N60C3 Symbol Conditions min. Values typ. 40 6800 2200 145 193 412 18 27 111 8 max. 165 12 Unit g fs Ciss Coss Crss V DS2*I D*R DS(on)max, ID=30A V GS=0V, V DS=25V, f=1MHz - S pF Effective output capacitance, 1) Co(er) V GS=0V, V DS=0V to 480V pF t d(on) tr t d(off) tf V DD=380V, V GS=0/13V, ID=47A, R G=1.8, Tj=125 - ns - 24 121 252 5.5 320 - nC V(plateau) VDD =350V, ID =47A V 1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-08-08 Final data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Characteristics Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt V GS=0V, I F=IS V R=350V, I F=I S , diF/dt=100A/s SPW47N60C3 Symbol Conditions min. Values typ. 1 580 23 73 900 max. 47 141 1.2 - Unit IS ISM TC=25C - A V ns C A A/s Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.002695 0.005428 0.011 0.026 0.034 0.018 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00108 0.00401 0.005389 0.014 0.051 0.321 Ws/K Unit Symbol Value typ. Unit Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2002-08-08 Final data 1 Power dissipation Ptot = f (TC ) 500 SPW47N60C3 SPW47N60C3 2 Drain current ID = f (TC ) parameter: VGS 10 V 55 SPW47N60C3 W A 45 40 400 350 Ptot 300 250 ID 20 40 60 80 100 120 35 30 25 200 20 150 100 50 0 0 15 10 5 C 160 0 0 20 40 60 80 100 120 C 160 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC =25C 10 3 4 Transient thermal impedance ZthJC = f (tp ) parameter: D = tp/T 10 1 A 10 2 K/W 10 0 10 1 ZthJC ID 10 -1 10 0 10 -2 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 0 10 10 1 10 2 10 V VDS 3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 Page 5 2002-08-08 Final data 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 10 s, VGS 280 20V SPW47N60C3 6 Typ. output characteristic ID = f (VDS ); Tj=150C parameter: tp = 10 s, VGS 160 20V A 7.5V A 6.5V 120 200 ID ID 7V 6V 100 5.5V 160 6.5V 80 120 6V 60 5V 80 5.5V 40 4.5V 40 5V 4.5V 20 4V 0 0 4 8 12 16 20 26 V VDS 0 0 4 8 12 16 20 26 V VDS 7 Typ. drain-source on resistance RDS(on) =f(ID ) parameter: Tj =150C, VGS 0.5 8 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 47 A, VGS = 10 V 0.38 SPW47N60C3 4V 4.5V 5V 0.32 R DS(on) RDS(on) 6V 6.5V 0.4 5.5V 0.28 0.24 0.2 0.16 0.12 0.35 0.3 0.25 0.2 98% 0.08 20V typ 0.04 0 -60 0.15 0.1 0 20 40 60 80 100 120 A 160 ID -20 20 60 100 C 180 Tj Page 6 2002-08-08 Final data 9 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 280 SPW47N60C3 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID =2.7mA 7 A 25C V 200 VGS(th) 5 ID max. 4 160 typ. 120 150C 3 min. 80 2 40 1 0 0 1 2 3 4 5 6 7 8 V 10 VGS 0 -60 -20 20 60 100 C 180 Tj 11 Typ. gate charge VGS = f (QGate ) parameter: ID = 47 A pulsed 16 SPW47N60C3 12 Forward characteristics of body diode IF = f (VSD ) parameter: Tj , tp = 10 s 10 3 SPW47N60C3 V A 12 V GS 10 8 6 IF 10 1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 0,2 VDS max 10 2 0,8 VDS max 4 2 0 0 40 80 120 160 200 240 280 320 nC 400 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate Page 7 VSD 2002-08-08 Final data 13 Typ. switching time t = f (ID), inductive load, Tj =125C par.: VDS =380V, VGS=0/+13V, RG =1.8 10 3 SPW47N60C3 14 Typ. switching time t = f (RG ), inductive load, Tj =125C par.: VDS =380V, VGS=0/+13V, ID=47 A 10 3 td(off) td(off) ns ns 10 2 10 2 td(on) tf td(on) t 10 1 tf t tr tr 10 1 10 0 10 -1 0 10 20 30 A ID 50 10 0 0 2 4 6 8 10 12 14 16 20 RG 15 Typ. drain current slope di/dt = f(RG ), inductive load, Tj = 125C par.: VDS =380V, VGS=0/+13V, ID=47A 6000 16 Typ. drain source voltage slope dv/dt = f(RG ), inductive load, Tj = 125C par.: VDS =380V, VGS=0/+13V, ID=47A 80 V/ns A/s dv/dt(off) 60 di/dt 4000 dv/dt di/dt(on) 50 3000 40 30 2000 20 1000 di/dt(off) dv/dt(on) 10 0 0 2 4 6 8 10 12 14 16 20 RG 0 0 2 4 6 8 10 12 14 16 20 RG Page 8 2002-08-08 Final data 17 Typ. switching losses E = f (ID ), inductive load, Tj=125C par.: VDS =380V, VGS=0/+13V, RG =1.8 0.4 *) Eon includes SDP06S60 diode commutation losses. SPW47N60C3 18 Typ. switching losses E = f(RG ), inductive load, Tj =125C par.: VDS =380V, VGS=0/+13V, ID=47A 1.4 *) Eon includes SDP06S60 diode commutation losses. mWs mWs 1 E Eoff E 0.8 Eoff 0.2 0.6 Eon* 0.4 0.1 0.2 Eon* 0 0 10 20 30 A ID 50 0 0 2 4 6 8 10 12 14 16 20 RG 19 Avalanche SOA IAR = f (tAR ) par.: Tj 150 C 20 20 Avalanche energy EAS = f (Tj ) par.: ID = 10 A, VDD = 50 V 1800 A 16 14 mJ 1400 E AS 10 -2 I AR 1200 1000 12 10 800 8 600 6 4 2 0 -3 10 -1 0 1 2 4 400 200 0 25 10 10 10 10 s 10 tAR 50 75 100 C Tj 150 Page 9 2002-08-08 Final data 21 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPW47N60C3 SPW47N60C3 22 Avalanche power losses PAR = f (f ) parameter: EAR =1mJ 500 720 V - V(BR)DSS 680 660 640 620 200 600 580 560 540 -60 04 10 P AV 300 100 -20 20 60 100 C 180 10 5 Hz f 10 6 Tj 23 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 5 24 Typ. Coss stored energy Eoss=f(VDS ) 30 pF Ciss J 10 4 E oss 10 3 Coss 20 C 15 10 10 2 Crss 5 10 1 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Page 10 2002-08-08 Final data SPW47N60C3 Definition of diodes switching characteristics Page 11 2002-08-08 Final data P-TO-247-3-1 15.9 6.35 o3.61 5.03 2.03 SPW47N60C3 4.37 20.9 9.91 6.17 D 7 D 1.75 1.14 0.243 1.2 2 2.92 5.46 16 0.762 MAX. 2.4 +0.05 General tolerance unless otherwise specified: Leadframe parts: 0.05 Package parts: 0.12 41.22 2.97 x 0.127 5 5.94 20 Page 12 2002-08-08 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPW47N60C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 13 2002-08-08 |
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